Patent Number: 6,885,041

Title: Semiconductor device, method for fabricating the semiconductor device and semiconductor integrated circuit

Abstract: A semiconductor device comprises: a channel region 14 of silicon, a source region 26 and a drain region 26 respectively forming junction with the channel region 14, and a gate electrode 30 formed on the channel region 14 interposing an insulation film 16 therebetween, either of the source region 26 and the drain region 26 being formed of SiGeC, which lattice-matches with silicon. Whereby parasitic resistance between the source region and the drain region can be much decreased.

Inventors: Awano; Yuji (Kawasaki, JP)

Assignee: Fujitsu Limited

International Classification: H01L 21/02 (20060101); H01L 21/70 (20060101); H01L 29/66 (20060101); H01L 27/12 (20060101); H01L 21/336 (20060101); H01L 29/786 (20060101); H01L 21/84 (20060101); H01L 031/0328 ()

Expiration Date: 04/26/2022