Patent Number: 6,885,042

Title: Hetero-junction bipolar transistor and a manufacturing method of the same

Abstract: This invention provides a hetero-junction bipolar transistor (HBT) having a large base-collector breakdown voltage. The HBT has a collector, a base and an emitter. The emitter is made of a semiconductor material whose band gap energy is greater than that of the base. An passivation layer made of a semiconductor material cover the collector, the base and the emitter and the band gap energy of the passivation layer is greater than that of the collector and the base.

Inventors: Yanagisawa; Masaki (Yokohama, JP), Yano; Hiroshi (Yokohama, JP)

Assignee: Sumitomo Electric Industries, Ltd.

International Classification: H01L 21/02 (20060101); H01L 21/331 (20060101); H01L 21/205 (20060101); H01L 29/66 (20060101); H01L 23/58 (20060101); H01L 21/308 (20060101); H01L 31/0264 (20060101); H01L 29/737 (20060101); H01L 31/0328 (20060101); H01L 029/737 (); H01L 023/58 ()

Expiration Date: 4/26/02017