Patent Number: 6,885,049

Title: Spin dependent tunneling junctions including ferromagnetic layers having flattened peaks

Abstract: A spin dependent tunneling ("SDT") junction of a memory cell for a Magnetic Random Access Memory ("MRAM") device includes a pinned ferromagnetic layer, followed by an insulating tunnel barrier and a sense ferromagnetic layer. During fabrication of the MRAM device, after formation of the pinned layer but before formation of the insulating tunnel barrier, an exposed surface of the pinned layer is flattened. The exposed surface of the pinned layer may be flattened by an ion etching process.

Inventors: Nickel; Janice (Sunnyvale, CA)

Assignee: Hewlett-Packard Development Company, L.P.

International Classification: H01F 10/32 (20060101); G11C 11/16 (20060101); H01L 21/8246 (20060101); H01L 21/70 (20060101); G11C 11/02 (20060101); H01L 27/22 (20060101); H01F 10/00 (20060101); H01L 029/76 (); H01L 029/94 (); H01L 031/062 (); H01L 031/113 (); H01L 031/119 ()

Expiration Date: 04/26/2022