Patent Number: 6,885,051

Title: Minimally spaced MRAM structures

Abstract: A method of forming minimally spaced apart MRAM structures is disclosed. A photolithography technique is employed to define patterns an integrated circuit, the width of which is further reduced by etching to allow formation of patterns used to etch digit line regions with optimum critical dimension between any of the two digit line regions. Subsequent pinned and sense layers of MRAM structures are formed over the minimally spaced digit regions.

Inventors: Durcan; D. Mark (Boise, ID), Doan; Trung T. (Boise, ID), Lee; Roger (Boise, ID), Keller; Dennis (Boise, ID), Earl; Ren (Meridian, ID)

Assignee: Micron Technology, Inc.

International Classification: H01L 21/70 (20060101); H01L 21/8246 (20060101); H01L 27/22 (20060101); H01L 031/062 (); H01L 031/036 ()

Expiration Date: 04/26/2022