Patent Number: 6,885,054

Title: Threshold voltage stabilizer, method of manufacturing and integrated circuit employing the same

Abstract: The present invention provides a threshold voltage stabilizer for use with a MOS transistor having a body effect associated therewith. In one embodiment, the threshold voltage stabilizer, includes a body well located in a substrate, a source located in the body well, and a stabilization region positioned below the body well. The threshold voltage stabilizer is configured to provide a stabilization voltage to the stabilization region to increase a depletion region within the body well and thereby restrict the body effect to stabilize a threshold voltage of the MOS transistor.

Inventors: Wu; Xiaoju (Irving, TX), Hao; Pinghai (Plano, TX), Khan; Imran M. (Richardson, TX)

Assignee: Texas Instruments Incorporated

International Classification: H01L 29/66 (20060101); H01L 27/108 (20060101); H01L 29/94 (20060101); H01L 027/108 (); H01L 029/94 ()

Expiration Date: 04/26/2022