Patent Number: 6,885,060

Title: Non-volatile semiconductor memory device and process for fabricating thesame

Abstract: A non-volatile semiconductor memory device comprising a first conductivesemiconductor having steps on a surface thereof, a second conductivesemiconductor region formed on an upper portion and a bottom portion ofeach of the steps and being separated in a direction perpendicular to themain surface of the first conductive semiconductor to function as a sourceor a drain, a gate dielectric film containing therein charge storage meanswhich is spatially discrete and being formed on the first conductivesemiconductor so as to coat at least a sidewall of each of the steps, anda gate electrode formed on the gate dielectric film. Accordingly, thereare provided a non-volatile semiconductor memory device which suffersalmost no deterioration in the properties and can perform the operation ofrecording of 2 bits per unit memory device even when the size of thesemiconductor memory device in the semiconductor substrate is scaled down,and a process for fabricating the non-volatile semiconductor memorydevice.

Inventors: Nomoto; Kazumasa (Kanagawa, JP), Kobayashi; Toshio (Kanagawa, JP)


International Classification: H01L 21/70 (20060101); H01L 27/115 (20060101); H01L 29/66 (20060101); H01L 21/8246 (20060101); H01L 29/792 (20060101); H01L 029/00 ()

Expiration Date: 04/26/2013