Patent Number: 6,885,077

Title: Schottky diode

Abstract: A Schottky diode has a Schottky junction formed by a thin metal layer and/or metal silicide layer at the top side of a doped well in a semiconductor body or substrate. In contrast to the fabrication of low-impedance contacts on CMOS wells, a metal, to be precise titanium in the preferred embodiment, is applied not to a highly doped contact region but to the lightly doped semiconductor material of the doped well, for example an HV well for the fabrication of high-voltage transistors.

Inventors: Dietl; Josef (Munchen, DE), Taddiken; Hans (Munchen, DE)

Assignee: Infineon Technologies AG

International Classification: H01L 29/66 (20060101); H01L 29/872 (20060101); H01L 027/095 ()

Expiration Date: 04/26/2022