Patent Number: 6,885,148

Title: Active matrix display device

Abstract: In order to provide an active matrix display device in which a thick insulating film is preferably formed around an organic semiconductive film of a thin film luminescent device without damaging the thin film luminescent device, the active matrix display device is provided with a bank layer (bank) along a data line (sig) and a scanning line (gate) to suppress formation of parasitic capacitance in the data line (sig), in which the bank layer (bank) surrounds a region that forms the organic semiconductive film of the thin film luminescent device by an ink-jet process. The bank layer (bank) includes a lower insulating layer formed of a thick organic material and an upper insulating layer of an organic material which is deposited on the lower insulating layer and has a smaller thickness so as to avoid contact of the organic semiconductive film with the upper insulating layer.

Inventors: Yudasaka; Ichio (Chino, JP)

Assignee: Seiko Epson Corporation

International Classification: H01L 27/28 (20060101); H01L 27/32 (20060101); H01L 51/40 (20060101); H01L 51/05 (20060101); H05B 033/22 (); H01J 001/62 ()

Expiration Date: 04/26/2022