Patent Number: 6,966,810

Title: Method of forming flow-fill structures

Abstract: A preferred embodiment of the invention is directed to support structures such as spacers used to provide a uniform distance between two layers of a device. In accordance with a preferred embodiment, the spacers may be formed utilizing flow-fill deposition of a wet film in the form of a precursor such as silicon dioxide. Formation of spacers in this manner provides a homogenous amorphous support structure that may be used to provide necessary spacing between layers of a device such as a flat panel display.

Inventors: Vaarstra; Brian A. (Nampa, ID)

Assignee: Micron Technology, Inc.

International Classification: H01J 63/00 (20060101); H01J 63/04 (20060101); H01J 1/00 (20060101); H01J 9/24 (20060101); H01J 9/00 (20060101); H01J 1/62 (20060101); H01J 009/00 ()

Expiration Date: 1/22/02018