Patent Number: 6,966,936

Title: Processing system, evacuating system for processing system, low-pressure CVD system, and evacuating system and trapping device for low-pressure CVD system

Abstract: An object of the present invention is to ensure the stable operation of a vacuum pump for discharging an unused source gas and reaction byproduct gases from a low-pressure processing chamber, to recover the reaction byproducts efficiently for the effective utilization of resources and reduction of running costs. A low-pressure CVD system has a processing vessel (10) for carrying out a low-pressure CVD process for forming a copper film, a source gas supply unit (12) for supplying an organic copper compound as a source gas, such as Cu(I)hfacTMVS, into the processing vessel (10), and an evacuating system (14) for evacuating the processing vessel (10). The evacuating system (14) includes a vacuum pump (26), a high-temperature trapping device (28) disposed above the vacuum pump (26) with respect to the flowing direction of a gas, and a low-temperature trapping device (30) disposed below the vacuum pump with respect to the flowing direction of a gas. The high-temperature trapping device (28) decomposes the unused Cu(I)hfacTMVS contained in a gas sucked out of the processing vessel (10) to trap metallic copper. The low-temperature trapping device traps Cu(II)(hfac).sub.2 produced as a reaction byproduct.

Inventors: Yamasaki; Hideaki (Kofu, JP), Kawano; Yumiko (Kofu, JP), Kubo; Kenichi (Kofu, JP), Arima; Susumu (Yamanashi-Ken, JP)

Assignee: Tokyo Electron Limited

International Classification: C23C 16/44 (20060101); C23C 16/18 (20060101); B01D 045/08 ()

Expiration Date: 1/22/02018