Patent Number: 6,967,072

Title: Photolithography scheme using a silicon containing resist

Abstract: A method for forming a patterned amorphous carbon layer in a semiconductor stack, including forming an amorphous carbon layer on a substrate and forming a silicon containing photoresist layer on top of the amorphous carbon layer. Thereafter, the method includes developing a pattern transferred into the resist layer with a photolithographic process and etching through the amorphous carbon layer in at least one region defined by the pattern in the resist layer, wherein a resist layer hard mask is formed in an outer portion of the photoresist layer during etching.

Inventors: Latchford; Ian (Sunnyvale, CA), Bencher; Christopher Dennis (San Jose, CA), Wang; Yuxiang (San Jose, CA), Silvetti; Mario Dave (Morgan Hill, CA)

Assignee: Applied Materials, Inc.

International Classification: H01L 21/70 (20060101); H01L 21/02 (20060101); H01L 21/027 (20060101); H01L 21/768 (20060101); H01L 21/311 (20060101); H01L 21/314 (20060101); H01L 21/316 (20060101); G03F 007/004 (); G03F 007/085 ()

Expiration Date: 1/22/02018