Patent Number: 6,967,115

Title: Device transfer techniques for thin film optoelectronic devices

Abstract: A method for fabricating optoelectronic devices is disclosed. A sacrificial layer is deposited, formed or attached to a target substrate having a plurality of through holes. One or more device layers are formed on the sacrificial layer and the sacrificial layer is exposed to an etchant through the holes in the target substrate to detach the target substrate from the sacrificial layer without destroying the target substrate.

Inventors: Sheats; James R. (Palo Alto, CA)

Assignee: Nanosolor, Inc.

International Classification: H01L 21/00 (20060101); H01L 021/00 ()

Expiration Date: 1/22/02018