Patent Number: 6,967,134

Title: Methods of forming nitrogen-containing masses, silicon nitride layers, and capacitor constructions

Abstract: The invention encompasses a method of forming a silicon nitride layer. A substrate is provided which comprises a first mass and a second mass. The first mass comprises silicon and the second mass comprises silicon oxide. A sacrificial layer is formed over the first mass. While the sacrificial layer is over the first mass, a nitrogen-containing material is formed across the second mass. After the nitrogen-containing material is formed, the sacrificial layer is removed. Subsequently, a silicon nitride layer is formed to extend across the first and second masses, with the silicon nitride layer being over the nitrogen-containing material. Also, a conductivity-enhancing dopant is provided within the first mass. The invention also pertains to methods of forming capacitor constructions.

Inventors: Ping; Er-Xuan (Meridian, ID), Yin; Zhiping (Boise, ID)

Assignee: Micron Technology, Inc.

International Classification: C23C 16/34 (20060101); H01L 21/02 (20060101); H01L 21/314 (20060101); H01L 21/318 (20060101); H01L 021/8242 ()

Expiration Date: 1/22/02018