Patent Number: 6,967,154

Title: Enhanced atomic layer deposition

Abstract: A method of enhanced atomic layer deposition is described. In an embodiment, the enhancement is the use of plasma. Plasma begins prior to flowing a second precursor into the chamber. The second precursor reacts with a prior precursor to deposit a layer on the substrate. In an embodiment, the layer includes at least one element from each of the first and second precursors. In an embodiment, the layer is TaN. In an embodiment, the precursors are TaF.sub.5 and NH.sub.3. In an embodiment, the plasma begins during the purge gas flow between the pulse of first precursor and the pulse of second precursor. In an embodiment, the enhancement is thermal energy. In an embodiment, the thermal energy is greater than generally accepted for ALD (>300 degrees Celsius). The enhancement assists the reaction of the precursors to deposit a layer on a substrate.

Inventors: Meng; Shuang (Boise, ID), Derderian; Garo J. (Boise, ID), Sandhu; Gurtej Singh (Boise, ID)

Assignee: Micron Technology, Inc.

International Classification: C23C 16/50 (20060101); C23C 16/515 (20060101); H01L 21/28 (20060101); H01L 21/285 (20060101); H01L 21/70 (20060101); H01L 21/02 (20060101); H01L 21/768 (20060101); C23C 16/44 (20060101); H01L 21/314 (20060101); H01L 021/4763 ()

Expiration Date: 1/22/02018