Patent Number: 6,967,167

Title: Silicon dioxide removing method

Abstract: A method for removing silicon dioxide residuals is disclosed. The method includes reacting a portion of a silicon dioxide layer (i.e., oxide) to form a reaction product layer, removing the reaction product layer and annealing in an environment to remove oxide residuals. The method finds application in a variety of semiconductor fabrication processes including, for example, fabrication of a vertical HBT or silicon-to-silicon interface without an oxide interface.

Inventors: Geiss; Peter J. (Underhill, VT), Joseph; Alvin J. (Williston, VT), Liu; Xuefeng (South Burlington, VT), Nakos; James S. (Essex Junction, VT), Quinlivan; James J. (Essex Junction, VT)

Assignee: International Business Machines Corporation

International Classification: H01L 21/302 (20060101); H01L 21/02 (20060101); H01L 21/461 (20060101); H01L 021/302 ()

Expiration Date: 1/22/02018