Patent Number: 6,984,563

Title: Floating gate semiconductor component and method of manufacture

Abstract: A semiconductor component having a substantially planar surface on which a film can be deposited and a method for manufacturing the semiconductor component. A layer of dielectric material is formed over a semiconductor substrate and a layer of polysilicon is formed on the layer of dielectric material. The polysilicon layer is patterned to form floating gate structures and expose portions of the layer of dielectric material. Additional dielectric material is formed over the floating gate structures and the exposed portions of the layer of dielectric material. The additional dielectric material is planarized such that it has a surface that is substantially contiguous with and coplanar with the floating gate structures. An oxide-nitride-oxide (ONO) dielectric structure or stack is formed on the surfaces of the floating gate structures and the dielectric material. A layer of polysilicon is formed on the ONO dielectric structure.

Inventors: Higgins, Sr.; Kelley Kyle (Austin, TX), Burki; Ibrahim Khan (Austin, TX)

Assignee: FASL LLC

International Classification: H01L 21/336 (20060101)

Expiration Date: 1/10/02018