Patent Number: 7,029,595

Title: Selective etch for uniform metal trace exposure and milling using focused ion beam system

Abstract: A system and method for exposing and/or milling a copper metallization layer disposed in dielectric that may have an overlying polyimide layer preferably by use of a FIB machine system used for exposing/milling aluminum metallization layers is disclosed. The method includes using a gas assisted (GAS) system for exposing a portion of a copper metal trace disposed in a dielectric and includes the step of removing a portion of the dielectric overlying the portion of the metal trace using the GAS system activated with a dielectric selective chemical that does not have a significant spontaneous (non ion-beam induced) reaction with the metal trace. The system includes a focused ion beam (FIB) machine for exposing/milling a portion of a metal trace disposed in a dielectric substrate wherein the metal trace is copper.

Inventors: Li; Xia (Susan) (Fremont, CA), Delenia; Eugene A. (Morgan Hill, CA), Ring; Rosalinda M. (Austin, TX)

Assignee: Advanced Micro Devices, Inc.

International Classification: H01L 21/00 (20060101)

Expiration Date: 4/18/02018