Patent Number: 7,029,723

Title: Forming chemical vapor depositable low dielectric constant layers

Abstract: Carborane may be used as a precursor to form low dielectric constant dielectrics. The carborane material may be modified to enable it to be deposited by chemical vapor deposition.

Inventors: Chen; Tian-An (Phoenix, AZ), Meagley; Robert (Beaverton, OR), O'Brien; Kevin P. (Portland, OR), Goodner; Michael D. (Hillsboro, OR), Powers; James (Aloha, OR)

Assignee: Intel Corporation

International Classification: C23C 16/38 (20060101); C23C 16/28 (20060101)

Expiration Date: 4/18/02018