Patent Number: 7,029,826

Title: Method to restore hydrophobicity in dielectric films and materials

Abstract: Silica dielectric films, whether nanoporous foamed silica dielectrics or nonporous silica dielectrics are readily damaged by fabrication methods and reagents that reduce or remove hydrophobic properties from the dielectric surface. The invention provides for methods of imparting hydrophobic properties to such damaged silica dielectric films present on a substrate. The invention also provides plasma-based methods for imparting hydrophobicity to both new and damaged silica dielectric films. Semiconductor devices prepared by the inventive processes are also provided.

Inventors: Hacker; Nigel P. (Palo Alto, CA), Thomas; Michael (Milpitas, CA), Drage; James S. (Fremont, CA)

Assignee: Honeywell International Inc.

International Classification: G03C 5/56 (20060101)

Expiration Date: 4/18/02018