Patent Number: 7,030,009

Title: Method for forming metal interconnect in a carbon containing silicon oxide film

Abstract: An insulating film is formed of a carbon-containing silicon dioxide film on a semiconductor substrate. In the insulating film, an interconnect groove is formed. A silicon dioxide layer with a density high enough to allow almost no oxygen to pass therethrough is formed on the bottom and side faces of the interconnect groove. And a metal interconnect is formed on the silicon dioxide layer inside the interconnect groove.

Inventors: Yuasa; Hiroshi (Kyoto, JP)

Assignee: Matsushita Electric Industrial Co., Ltd.

International Classification: H01L 21/4763 (20060101)

Expiration Date: 4/18/02018