Patent Number: 7,030,044

Title: Method of forming a cap layer having anti-reflective characteristics on top of a low-k dielectric

Abstract: A method of forming a multi-layer stack over a low-k dielectric layer is disclosed, wherein the multi-layer stack provides an improved anti-reflective effect and an enhanced protection of the underlying low-k dielectric material during the chemical mechanical polishing process. The multi-layer stack includes silicon dioxide based sub-layers, which may be formed in a highly efficient, non-expensive plasma enhanced deposition method, wherein the optical characteristics may be adjusted by varying a ratio of silane and nitrogen oxide during the deposition.

Inventors: Ruelke; Hartmut (Dresden, DE), Hohage; Joerg (Dresden, DE), Werner; Thomas (Dresden, DE), Mauersberger; Frank (Radebeul, DE)

Assignee: Advanced Micro Devices, Inc.

International Classification: H01L 21/31 (20060101); H01L 21/469 (20060101)

Expiration Date: 4/18/02018