Patent Number: 7,042,014

Title: Semiconductor device

Abstract: A semiconductor device has a two-dimensional slab photonic crystal structure in which a substrate supports a sheet-like slab layer including, sequentially stacked, a lower cladding layer, an active layer, and an upper cladding layer. A periodic refractive index profile structure, in surfaces of the stacked layers, introduces a linear defect region that serves as a waveguide. A p-type region and an n-type region in the slab layer define a pn junction surface at a predetermined angle with respect to the surfaces of the stacked layers in the slab layer.

Inventors: Sugitatsu; Atsushi (Tokyo, JP), Tada; Hitoshi (Tokyo, JP), Noda; Susumu (Kyoto, JP)

Assignee: Mitsubishi Denki Kabushiki Kaisha

International Classification: H01L 27/15 (20060101)

Expiration Date: 5/09/02018