Patent Number: 7,042,016

Title: Semiconductor optical device, method of forming contact in semiconductor optical device

Abstract: A semiconductor optical device comprises a superlattice contact semiconductor region and a metal electrode. The superlattice contact semiconductor region has a superlattice structure. The superlattice contact semiconductor region includes a II VI compound semiconductor region and a II VI compound semiconductor layer. The II VI compound semiconductor region contains zinc, selenium and tellurium, and the II VI compound semiconductor layer contains zinc and selenium. The metal electrode is provided on said superlattice contact semiconductor region and the metal electrode is electrically bonded to the first II VI compound semiconductor layer.

Inventors: Nakamura; Takao (Osaka, JP), Mori; Hiroki (Osaka, JP), Katayama; Koji (Osaka, JP)

Assignee: Sumitomo Electric Industries, Ltd.

International Classification: H01L 27/15 (20060101)

Expiration Date: 5/09/02018