Patent Number: 7,042,017

Title: Light emitting device

Abstract: A light emitting device includes an active layer, having a multiple quantum well structure, sandwiched between an n-type semiconductor layer and a p-type semiconductor layer. The active layer includes first and second well layers made of a nitride compound semiconductor containing In, where the second well layer emits light having a main peak wavelength which is longer than that of the first well layer, and where the growth number of the first well layer is more than the growth number of the second well layer.

Inventors: Yamada; Motokazu (Tokushima, JP)

Assignee: Nichia Corporation

International Classification: H01L 33/00 (20060101)

Expiration Date: 5/09/02018