Patent Number: 7,042,025

Title: Method and structure for contacting an overlying electrode for a magnetoelectronics element

Abstract: A method for contacting an electrically conductive electrode overlying a first dielectric material of a structure is provided. The method includes forming a mask layer overlying the electrically conductive electrode and patterning the mask layer to form an exposed electrically conductive electrode material. At least a portion of the exposed electrically conductive electrode material is removed while an electrically conductive veil is formed adjacent the mask layer. A metal contact layer is formed such that said metal contact layer contacts the electrically conductive veil.

Inventors: Butcher; Brian R. (Gilbert, AZ), Smith; Kenneth H. (Chandler, AZ), Tracy; Clarence J. (Tempe, AZ)

Assignee: Freescale Semiconductor, Inc.

International Classification: H01L 29/74 (20060101); H01L 31/111 (20060101)

Expiration Date: 5/09/02018