Patent Number: 7,042,074

Title: Power semiconductor module and method for producing it

Abstract: A power semiconductor module and a method for producing it, wherein the module includes a substrate, with conductor tracks disposed on it to suit circuitry with which the module is used and with power semiconductor components disposed on the conductor tracks. Also disposed on the conductor tracks are spacer elements and a foil composite that includes two metal foil layers with an electrically insulating foil layer disposed between them. The foil composite has contact humps and plated-through holes. At least one of the metal foil layers is structured in a manner to suit the circuitry with which the module is used, and this foil composite is durably connected to the power semiconductor components and to the spacer elements, preferably by ultrasonic welding.

Inventors: Gobl; Christian (Nuremberg, DE), Heilbronner; Heinrich (Stein, DE)

Assignee: SEMIKRON Elektronik GmbH & Co., KG

International Classification: H01L 23/02 (20060101); H01L 23/34 (20060101)

Expiration Date: 5/09/02018