Patent Number: 7,042,249

Title: Method for actuating a transistor

Abstract: The present invention provides a method for actuating a transistor (10) having the following steps: (a) a first predetermined positive potential is applied to a first voltage supply node (13) in a latch circuit (11), the voltage supply node (13) being coupled to a control connection on the transistor (10); (b) a reference-ground potential is applied to a second voltage supply node (14) in the latch circuit (11), the second voltage supply node (14) being connected to a source connection on the transistor (10); (c) the latch circuit (11) is set to a predetermined state, which turns the transistor (10) on or off; (d) the potential at the second voltage supply node (14) is lowered; and (e) the potential at the first voltage supply node (13) is lowered if the potential difference between the first and second voltage supply nodes (13, 14) exceeds a predetermined threshold value.

Inventors: Jankowski; Maciej (Munich, DE), Rogl; Stephan (Vilsheim, DE)

Assignee: Infineon Technologies AG

International Classification: H03K 3/356 (20060101)

Expiration Date: 5/09/02018