Patent Number: 7,042,548

Title: Image sensor having thin film transistor and photoelectric conversion element

Abstract: A display device using a novel semiconductor device, which includes a pixel matrix, an image sensor, and a peripheral circuit for driving those, that is, which has both a camera function and a display function, and is made intelligent is provided and a method of manufacturing the same is also provided. One pixel includes a semiconductor device for display and a semiconductor for light reception, that is, one pixel includes semiconductor devices (insulated gate-type field effect semiconductor device) for controlling both display and light reception, so that the display device having a picture reading function is made miniaturized and compact.

Inventors: Zhang; Hongyong (Atsugi, JP), Sakakura; Masayuki (Atsugi, JP), Kuwabara; Hideaki (Atsugi, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

International Classification: G02F 1/13 (20060101); H01L 29/04 (20060101)

Expiration Date: 5/09/02018