Patent Number: 7,042,758

Title: Magnetic cell and magnetic memory

Abstract: It is possible to provide a magnetic cell having a high developing rate of MR characteristics and a reduced fluctuation without causing element falling-down and a magnetic memory having the same. A magnetic cell includes: a lower electrode; an electrically conductive pillar formed on the lower electrode; a magnetoresistance effect film having at least two ferromagnetic layers formed on the electrically conductive pillar and an intermediate layer provided between the ferromagnetic layers; an upper electrode formed on the magnetoresistance effect film; a support layer formed from at least one metal directly on a side face of the electrically conductive pillar or via an insulating layer; and a current diffusion preventing layer provided between the support layer and the lower electrode, wherein a height of the electrically conductive pillar, a thickness of the current diffusion preventing layer, and a thickness of the support layer satisfy relationships of >>.times. ##EQU00001## where h represents the height of the electrically conductive pillar, t1 represents the thickness of the current diffusion preventing layer, t2 represents the thickness of the support layer, and L (nm) represents a length of a short side of the electrically conductive pillar.

Inventors: Haneda; Shigeru (Kanagawa-Ken, JP), Nakamura; Shiho (Kanagawa-Ken, JP), Oosawa; Yuuichi (Kanagawa-Ken, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: G11C 7/00 (20060101)

Expiration Date: 5/09/02018