Patent Number: 7,042,921

Title: Complex coupled single mode laser with dual active region

Abstract: A semiconductor complex coupled light emitting device is disclosed having a lower cladding layer, an optical cavity formed adjacent the lower cladding layer and an upper cladding layer formed adjacent the optical cavity. The optical cavity includes a lower multi-quantum well active region formed from a first high reactivity material system and an upper multi-quantum well diffraction grating structure formed from a second low reactivity material system that is not subject to oxidation when etched.

Inventors: Witzigmann; Bernd (Burbank, CA), Tsai; Charles (Hacienda Heights, CA)

Assignee: Emcore Corporation

International Classification: H01S 3/08 (20060101); H01S 3/14 (20060101); H01S 5/00 (20060101)

Expiration Date: 5/09/02018