Patent Number: 7,045,369

Title: Method of fabricating and/or repairing a light emitting device

Abstract: A method of repairing a light emitting device which makes high quality image display possible even if a pin hole is formed during formation of an EL layer is provided. The method of repairing a light emitting device is characterized in that a reverse bias voltage is applied to an EL element at given time intervals to thereby reduce a current flowing into an EL element when the reverse bias voltage is applied to the EL element.

Inventors: Yamazaki; Shunpei (Tokyo, JP), Arai; Yasuyuki (Kanagawa, JP), Osada; Mai (Kanagawa, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

International Classification: H01L 21/00 (20060101)

Expiration Date: 5/16/02018