Patent Number: 7,045,403

Title: Method for producing insulated gate thin film semiconductor device

Abstract: An amorphous miconductor film is etched so that a width of a narrowest portion thereof is 100 .mu.m or less, thereby forming island semiconductor regions. By irradiating an intense light such as a laser into the island semiconductor regions, photo-annealing is performed to crystallize it. Then, of end portions (peripheral portions) of the island semiconductor regions, at least a portion used to form a channel of a thin film transistor (TFT), or a portion that a gate electrode crosses is etched, so that a region that the distortion is accumulated is removed. By using such semiconductor regions, a TFT is produced.

Inventors: Kusumoto; Naoto (Kanagawa, JP), Yamazaki; Shunpei (Tokyo, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

International Classification: H01L 21/00 (20060101); H01L 21/84 (20060101)

Expiration Date: 5/16/02018