Patent Number: 7,045,444

Title: Method of manufacturing semiconductor device that includes selectively adding a noble gas element

Abstract: Phosphorus is implanted into a crystalline semiconductor film by an ion dope method. However, a concentration of phosphorus required for gettering is 1.times.10.sup.20/cm.sup.3 or higher which hinders recrystallization by later anneal, and thus this becomes a problem. Also, when phosphorus is added at a high concentration, processing time required for doping is increased and throughput in a doping step is reduced, and thus this becomes a problem. The present invention is characterized in that impurity regions to which an element belonging to the group 18 of the periodic table is added are formed in a semiconductor film having a crystalline structure and gettering for segregating in the impurity regions a metal element contained in the semiconductor film is performed by heat treatment. Also, a one conductivity type impurity may be contained in the impurity regions.

Inventors: Yamazaki; Shunpei (Tokyo, JP), Nakamura; Osamu (Kanagawa, JP), Kajiwara; Masayuki (Kanagawa, JP), Koezuka; Junichi (Kanagawa, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

International Classification: H01L 21/322 (20060101)

Expiration Date: 5/16/02018