Patent Number: 7,078,747

Title: Semiconductor device having a HMP metal gate

Abstract: A semiconductor device has a dual-gate electrode structure. The gate electrode has a layered structure including a doped polysilicon film, WSi.sub.2 film, WN film and a W film. The WSi.sub.2 film formed on the polysilicon film in the P-channel area is formed of a number of WSi.sub.2 particles disposed apart from one another, preventing a bilateral diffusion of impurities doped in the polysilicon film.

Inventors: Taguwa; Tetsuya (Tokyo, JP)

Assignee: Elpida Memory, Inc.

International Classification: H01L 27/148 (20060101)

Expiration Date: 7/18/02018