Patent Number: 7,085,616

Title: Atomic layer deposition apparatus

Abstract: A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.

Inventors: Chin; Barry L. (Saratoga, CA), Mak; Alfred W. (Union City, CA), Lei; Lawrence Chung-Lai (Milpitas, CA), Xi; Ming (Palo Alto, CA), Chung; Hua (San Jose, CA), Lai; Ken Kaung (Milpitas, CA), Byun; Jeong Soo (Cupertino, CA)

Assignee: Applied Materials, Inc.

International Classification: G06F 19/00 (20060101)

Expiration Date: 8/01/02018