Patent Number: 7,087,480

Title: Process to make high-k transistor dielectrics

Abstract: A method of reducing impurities in a high-k dielectric layer comprising the following steps. A substrate is provided. A high-k dielectric layer having impurities is formed over the substrate. The high-k dielectric layer being formed by an MOCVD or an ALCVD process. The high-k dielectric layer is annealed to reduce the impurities within the high-k dielectric layer.

Inventors: Yao; Liang-Gi (Hsin-Chu, TW), Wang; Ming-Fang (Taichung, TW), Chen; Shih-Chang (Taoyuan, TW), Liang; Mon-Song (Hsin-Chu, TW)

Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.

International Classification: H01L 21/31 (20060101)

Expiration Date: 8/08/02018