Patent Number: 7,087,481

Title: Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands

Abstract: A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include aminosilane ligands.

Inventors: Vaartstra; Brian A. (Nampa, ID), Quick; Timothy A. (Boise, ID)

Assignee: Micron Technology, Inc.

International Classification: H01L 21/00 (20060101)

Expiration Date: 8/08/02018