Patent Number: 7,087,490

Title: Method and composite for decreasing charge leakage

Abstract: A dielectric insulating composite for insulating a floating gate from a control gate in a non-volatile memory is described. A material, such as an undoped polysilicon, amorphous silicon, or amorphous polysilicon or a silicon rich nitride, is inserted in the gate structure. The oxide film that results from the oxidation of these films is relatively free from impurities. As a result, charge leakage between the floating gate and control gate is reduced.

Inventors: Nuttall; Michael (Meridian, ID), Mercaldi; Garry A. (Meridian, ID)

Assignee: Micron Technology, Inc.

International Classification: H01L 21/336 (20060101)

Expiration Date: 8/08/02018