Patent Number: 7,087,497

Title: Low-thermal-budget gapfill process

Abstract: A low-thermal-budget gapfill process is provided for filling a gap formed between two adjacent raised features on a strained-silicon substrate as part of a shallow-trench-isolation process. An electrically insulating liner is deposited using atomic-layer deposition and polysilicon is deposited over the electrically insulating liner, with both stages being conducted at temperatures below 700.degree. C.

Inventors: Yuan; Zheng (Fremont, CA), Arghavani; Reza (Scotts Valley, CA), Yieh; Ellie Y (San Jose, CA), Venkataraman; Shankar (Santa Clara, CA)

Assignee: Applied Materials

International Classification: H01L 21/336 (20060101)

Expiration Date: 8/08/02018