Patent Number: 7,087,526

Title: Method of fabricating a p-type CaO-doped SrCu.sub.2O.sub.2 thin film

Abstract: A method of CaO-doped SrCu.sub.2O.sub.2 spin-on precursor synthesis and low temperature p-type thin film deposition, includes preparing a wafer to receive a spin-coating thereon; selecting metalorganic compounds to form a SrCu.sub.2O.sub.2 precursor, mixing and refluxing the metalorganic compounds to form a precursor mixture; filtering the precursor mixture to produce a spin-coating precursor; applying the spin-coating precursor to the wafer in a two-step spin coating procedure; baking the spin-coated wafer using a hot-plate bake to evaporate substantially all of the solvents; and annealing the spin-coated wafer to form a CaO-doped SrCu.sub.2O.sub.2 layer thereon.

Inventors: Zhuang; Wei-Wei (Vancouver, WA), Gao; Wei (Vancouver, WA), Ono; Yoshi (Camas, WA)

Assignee: Sharp Laboratories of America, Inc.

International Classification: H01L 23/02 (20060101)

Expiration Date: 8/08/02018