Patent Number: 7,087,534

Title: Semiconductor substrate cleaning

Abstract: Methods for removing titanium-containing layers from a substrate surface where those titanium-containing layers are formed by chemical vapor deposition (CVD) techniques. Titanium-containing layers, such as titanium or titanium nitride, formed by CVD are removed from a substrate surface using a sulfuric acid (H.sub.2SO.sub.4) solution. The H.sub.2SO.sub.4 solution permits selective and uniform removal of the titanium-containing layers without detrimentally removing surrounding materials, such as silicon oxides and tungsten. Where the titanium-containing layers are applied to the sidewalls of a hole in the substrate surface and a plug material such as tungsten is used to fill the hole, subsequent spiking of the H.sub.2SO.sub.4 solution with hydrogen peroxide (H.sub.2O.sub.2) may be used to recess the titanium-containing layers and the plug material below the substrate surface.

Inventors: Chen; Gary (Boise, ID)

Assignee: Micron Technology, Inc.

International Classification: H01L 21/461 (20060101)

Expiration Date: 8/08/02018