Patent Number: 7,087,831

Title: Photoelectric conversion device and method of production thereof

Abstract: A photoelectric conversion device comprising at least an electron acceptive charge transfer layer, an electron donative charge transfer layer, and a light absorption layer existing between the charge transfer layers, wherein either one of the charge transfer layers comprises a semiconductor acicular crystal layer comprising an aggregate of acicular crystals or a mixture of an acicular crystal and another crystal, and a method of producing the device are disclosed. Consequently, a photoelectric conversion device being capable of smoothly carrying out transfer of electrons and having high photoelectric conversion efficiency is provided.

Inventors: Den; Tohru (Tokyo, JP), Okura; Hiroshi (Kanagawa-ken, JP)

Assignee: Canon Kabushiki Kaisha

International Classification: H01L 31/0352 (20060101); H01L 31/0264 (20060101); H01L 31/036 (20060101)

Expiration Date: 8/08/02018