Patent Number: 7,087,910

Title: Method for detecting and compensating for positional displacements in photolithographic mask units and apparatus for carrying out the method

Abstract: A method for detecting and compensating for positional displacements of a photolithographic mask unit, includes providing mask production data for the writing of the mask unit with an electron beam. A structure density of the mask unit is input and an electron beam deflection is brought about on the mask unit in dependence on the determined structure density of the mask unit. The mask production data are corrected through the use of the determined electron beam deflection, in order to obtain corrected mask production data, and the corrected mask production data are output. A lithography apparatus for mask units with correction of positional displacements of the mask unit, is also provided.

Inventors: Schneider; Jens (Munchen, DE), Lutz; Tarek (Munchen, DE)

Assignee: Infineon Technologies AG

International Classification: H01J 37/304 (20060101); G03F 1/00 (20060101)

Expiration Date: 8/08/02018