Patent Number: 7,087,924

Title: Gallium-nitride based light emitting diode structure with enhanced light illuminance

Abstract: Disclosed is a multi-quantum-well light emitting diode, which makes enormous adjustments and improvements over the conventional light emitting diode, and further utilizes a transparent contact layer of better transmittance efficiency, so as to significantly raise the illuminance of this light emitting diode and its light emission efficiency. The multi-quantum-well light emitting diode has a structure including: substrate, buffer layer, n-type gallium-nitride layer, active light-emitting-layer, p-type cladding layer, p-type contact layer, barrier buffer layer, transparent contact layer, and the n-type electrode layer.

Inventors: Wu; Liang-Wen (Banciao, TW), Tu; Ru-Chin (Tainan, TW), Yu; Cheng-Tsang (Wufong, TW), Wen; Tzu-Chi (Tainan, TW), Chien; Fen-Ren (Yonghe, TW)

Assignee: Formosa Epitaxy Incorporation

International Classification: H01L 29/06 (20060101)

Expiration Date: 8/08/02018