Patent Number: 7,087,930

Title: Semiconductor light emitting element and method of making same

Abstract: A semiconductor light emitting element that is made by using the lateral growth function of semiconductor crystal while providing an ELO mask on a crystal growth surface of a crystal growth substrate. At least part of a sidewall of the ELO mask is provided with an inclined plane that is inclined to the crystal growth surface such that the semiconductor crystal to be formed on the ELO mask substantially has no void.

Inventors: Senda; Masanobu (Aichi-ken, JP), Ito; Jun (Aichi-ken, JP), Nishijima; Kazuki (Aichi-ken, JP), Hayashi; Toshimasa (Aichi-ken, JP)

Assignee: Toyodaa Gosei Co., Ltd.

International Classification: H01L 27/15 (20060101)

Expiration Date: 8/08/02018