Patent Number: 7,087,950

Title: Flash memory cell, flash memory device and manufacturing method thereof

Abstract: The present invention relates to a flash memory cell comprising a silicon substrate having an active region comprising a channel region and source-/drain-regions, the active region comprising a projecting portion, which projecting portion at least comprising said channel region; a tunneling dielectric layer formed on the surface of said active region; a floating gate formed on the surface of said tunneling dielectric layer for storing electric charges; an inter-gates coupling dielectric layer formed on the surface of said floating gate, and a control gate formed on the surface of said inter-gates coupling dielectric layer, wherein said floating gate is formed to have a groove-like shape for at least partly encompassing said projecting portion of said active region. This invention further relates to a flash memory device comprising such flash memory cells, as well as a manufacturing method thereof.

Inventors: Willer; Josef (Riemerling, DE), Lau; Frank (Bad Aibling, DE)

Assignee: Infineon Technologies AG

International Classification: H01L 29/76 (20060101); H01L 29/788 (20060101)

Expiration Date: 8/08/02018