Patent Number: 7,087,964

Title: Predominantly <100> polycrystalline silicon thin film transistor

Abstract: A method is provided to produce thin film transistors (TFTs) on polycrystalline films having a single predominant crystal orientation. A layer of amorphous silicon is deposited over a substrate to a thickness suitable for producing a desired crystal orientation. Lateral-seeded excimer laser annealing (LS-ELA) is used to crystallize the amorphous silicon to form a film with a preferred crystal orientation. A gate is formed overlying the polycrystalline film. The polycrystalline film is doped to produce source and drain regions.

Inventors: Voutsas; Apostolos (Vancouver, WA)

Assignee: Sharp Laboratories of America, Inc.

International Classification: H01L 21/00 (20060101)

Expiration Date: 8/08/02018