Patent Number: 7,087,972

Title: Magnetoelectronic devices utilizing protective capping layers and methods of fabricating the same

Abstract: Magnetoelectronic device structures and methods for fabricating the same are provided. One method comprises forming a first and a second conductor. The first conductor is electrically coupled to an interconnect stack. A first insulating layer is deposited overlying the first conductor and the second conductor. A via is etched to substantially expose the first conductor. A protective capping layer is deposited by electroless deposition within the via and is electrically coupled to the first conductor. A magnetic memory element layer is formed within the via and overlying the second insulating layer and the second conductor.

Inventors: Ren; J. Jack (Phoenix, AZ), Butcher; Brian R. (Gilbert, AZ), Durlam; Mark A. (Chandler, AZ), Grynkewich; Gregory W. (Gilbert, AZ)

Assignee: Freescale Semiconductor, Inc.

International Classification: H01L 29/82 (20060101)

Expiration Date: 8/08/02018