Patent Number: 7,087,985

Title: Nitride semiconductor light emitting device

Abstract: In a nitride semiconductor LED having a light emitting structure, an n-doped semiconductor layer has a first region and a second region surrounding the first region, an active layer is formed on the second region of the n-doped semiconductor layer, and a p-doped nitride semiconductor layer is formed on the active layer. A p-electrode is formed on the p-doped semiconductor layer. An n-electrode is formed on the first region of the n-doped nitride semiconductor layer.

Inventors: Park; Young Ho (Kyungki-do, KR), Cho; Hyo Kyoung (Kyungki-do, KR), Yoo; Seung Jin (Kyungki-do, KR), Ko; Kun Yoo (Seoul, KR)

Assignee: Samsung Electro-Mechanics Co., Ltd.

International Classification: H01L 23/495 (20060101)

Expiration Date: 8/08/02018