Patent Number: 7,088,186

Title: High-frequency power amplifier module

Abstract: A ground layer is provided between a first and a second wiring layer. A first transistor provided at the first wiring layer amplifies a supplied high-frequency signal. A second transistor provided at the first wiring layer amplifies the output signal of the first transistor. A first power supply line, which supplies power to the first transistor, is provided at the first wiring layer. A second power supply line, which supplies power to the second transistor, is provided at the second wiring layer.

Inventors: Sugiura; Masayuki (Tokyo, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H03F 3/14 (20060101)

Expiration Date: 8/08/02018